IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R

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Sunbeam Electronics (Hong Kong) Limited

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Name: IPD90R1K2C3 High Power MOSFET AMPAK Wifi Module NCH 900V 51A 3 Pin DPAK TR
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IPD90R1K2C3

Place of Origin : CHINA

MPN : IPD90R1K2C3

MFR : Infineon

Category : Mosfet

Size : 2.41*6.73*6.22mm

MOQ : package qty

Price : contact sales for updated price

Packaging Details : tape and reel

Delivery Time : 2 weeks

Payment Terms : T/T

Supply Ability : 1000+

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IPD90R1K2C3 Infineon Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	CoolMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	5.1
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (MOhm)	1200@10V
Typical Gate Charge @ Vgs (nC)	28@10V
Typical Gate Charge @ 10V (nC)	28
Typical Input Capacitance @ Vds (pF)	710@100V
Maximum Power Dissipation (mW)	83000
Typical Fall Time (ns)	40
Typical Rise Time (ns)	20
Typical Turn-Off Delay Time (ns)	400
Typical Turn-On Delay Time (ns)	70
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Diode Forward Voltage (V)	1.2
Pin Count	3
Standard Package Name	TO-252
Supplier Package	DPAK
Mounting	Surface Mount
Package Height	2.41(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab
Lead Shape	Gull-wing

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